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[1]周志达,等.碳化硅器件建模与杂散参数影响机理[J].电机与控制学报,2020,24(01):27-37.[doi:10.15938/j.emc.2020.01.004]
 ZHOU Zhi-da,GE Qiong-xuan,et al.Modeling of SiC power device and study of nonlinear stray parameters impact[J].,2020,24(01):27-37.[doi:10.15938/j.emc.2020.01.004]
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《电机与控制学报》[ISSN:1007-449X/CN:23-1 408/TM]

卷:
24
期数:
2020年01
页码:
27-37
栏目:
出版日期:
2020-01-15

文章信息/Info

Title:
Modeling of SiC power device and study of nonlinear stray parameters impact
作者:
周志达1 2 葛琼璇2 赵鲁2 杨博1 2
?( 1. 中国科学院大学,北京 100049; 2. 中国科学院电力电子与电气驱动重点实验室 中国科学院电工研究所,北京 100190)
Author(s):
ZHOU Zhi-da1 2 GE Qiong-xuan2 ZHAO Lu2 YANG Bo1 2
?( 1. University of Chinese Academy of Sciences, Beijing, China, Beijing 100049, China; 2. Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China)
关键词:
宽禁带半导体器件 动静态特性建模 非线性寄生电容 杂散电感 分阶段开关状态方程 电 压电流尖峰与振铃
Keywords:
wide-bandgap semiconductor device static and dynamic characteristics modeling nonlinear parasitic capacitance stray inductance phased switching state equation voltage and current spikes and ringings
分类号:
TM 133
DOI:
10.15938/j.emc.2020.01.004
文献标志码:
A
摘要:
为了更准确地评估碳化硅宽禁带半导体功率器件的性能和系统特性,需要搭建不同封装下 器件的快速行为仿真模型,包括静态特性模型与动态响应模型。首先基于 MOSFET 器件 EKV 模 型,舍去了原模型的漂移区电阻并赋予参数温度自由度后,实现一种仅需要器件数据手册的快速建 模方法。对比原静态模型,改进模型收敛速度更快; 器件转移特性和输出特性拟合精确度有明显提 高; 不同结温的静态特性可独立建模。其次,基于静态模型参数,校正了寄生电容和跨导,加入模块 封装和层叠母排的杂散电感和分布电容参数,分阶段建立了开关过程中驱动回路和主回路微分方 程,给出了器件杂散参数提取过程以及漏极电流、端电压的动态响应求解方法。最后搭建碳化硅功 率模块双脉冲实验电路,结果显示模型可真实重现开关过程中的电压电流尖峰与振铃细节。
Abstract:
For accurately estimating wide bandgap silicon carbide power device characteristic and system performance, fast and accurate behavioral static and dynamic model under discrete and module packaging should be built. Firstly, a modified EKV static model was built using only curves from datasheet. Compared with the original model, the proposed one removed the drift region resistance and applied temperature degree of freedom to all parameters. As a result, the proposed model showed faster convergence speed and significant improvement on fitting transfer and output characteristics, enabling independent modeling under different temperatures. Secondly, an analytical dynamic model was set up based on static model parameters. Parasitic capacitance and nonlinear transconductance were specially modified, packaging and laminated busbar stay parameters were taken into consideration. The differential equations of the driving loop and the main loop in switching process were established by stages, and the solution of drain current and node potential and extraction method of the analytical model were given in detail. Experiment results from double-pulse test were applied to verify the proposed model, great fitness was seen with the overshoot?and ringing of node voltage and drain current.

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备注/Memo

备注/Memo:
收稿日期: 2018 -03 -01?
基金项目: 国家重点研发计划( 2016YFB1200602 -20, 2017YFB1200901)?
作者简介: 周志达( 1991—) ,男,博士研究生,研究方向为宽禁带半导体在电力电子与电力传动中应用;?
? ? ? ? ? ? ? ? ?葛琼璇( 1967—) ,女,博士,研究员,博士生导师,研究方向为大功率变流器及高性能电机牵引控制技术;?
? ? ? ? ? ? ? ? ?赵 鲁( 1984—) ,男,博士,副研究员,研究方向为研究方向为电机及其控制、电力电子与电力传动;?
? ? ? ? ? ? ? ? ?杨 博( 1993—) ,男,博士研究生,研究方向为大功率 DC/DC 变换器等。?
通信作者: 葛琼璇
更新日期/Last Update: 2020-05-04